Performance and power analysis of through silicon via based 3D IC integration. - Hung Viet Nguyen; Myunghwan Ryu; Youngmin Kim (SLIP, 2011)

Diffusion-rounded CMOS for improving both Ion and Ioff characteristics. - Myunghwan Ryu; Hung Viet Nguyen; Youngmin Kim (IEICE Electron. Express, 2011)

A novel methodology for speeding up IC performance in 32nm FinFET. - Hung Viet Nguyen; Myunghwan Ryu; Youngmin Kim (IEICE Electron. Express, 2012)

TSV Geometrical Variations and Optimization Metric with Repeaters for 3D IC. - Hung Viet Nguyen; Myunghwan Ryu; Youngmin Kim (IEICE Trans. Electron., 2012)

Trapezoidal approximation for on-current modeling of 45-nm non-rectilinear gate shape. - Myunghwan Ryu; Youngmin Kim (IEICE Electron. Express, 2013)

A high resolution and high linearity 45nm CMOS fully digital voltage sensor for low power applications. - Myunghwan Ryu; Youngmin Kim (IEICE Electron. Express, 2013)

On-chip interconnect boosting technique by using of 10-nm double gate-all-around (DGAA) transistor. - Jaemin Lee; Myunghwan Ryu; Youngmin Kim (IEICE Electron. Express, 2015)