Device and circuit-level performance comparison of GAA nanosheet FET with varied geometrical parameters. - N. Aruna Kumari; Pothupogu Prithvi (Microelectron. J., 2022)

Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications. - B. Mounika; J. Ajayan; Sandip Bhattacharya; D. Nirmal; V. Bharath Sreenivasulu; N. Aruna Kumari (Microelectron. J., 2023)