Analytical approach of a nanoscale triple-material surrounding gate (TMSG) MOSFETs for reduced short-channel effects. - P. Suveetha Dhanaselvam; N. B. Balamurugan (Microelectron. J., 2013)

A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate (TMSG) MOSFETs. - P. Suveetha Dhanaselvam; N. B. Balamurugan; V. N. Ramakrishnan (Microelectron. J., 2013)

A 2D sub-threshold current model for single halo triple material surrounding gate (SHTMSG) MOSFETs. - P. Suveetha Dhanaselvam; N. B. Balamurugan (Microelectron. J., 2014)

Analytical Modeling of Dual Material Gate All around Stack Architecture of Tunnel FET. - N. B. Balamurugan; G. LakshmiPriya; S. Manikandan; G. Srimathi (VLSID, 2016)

A Comparative Review: Performance Parameters of Fin, Nanowire and Nanosheet Field Effect Transistors on 5nm Node. - V. Karutharaja; N. B. Balamurugan; M. Suguna; D. Sriram Kumar (ICDCS, 2024)

A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model. - E. Rajalakshmi; N. B. Balamurugan; M. Hemalatha; M. Suguna (Microelectron. J., 2024)

A new quasi-3D analytical framework for channel potential and threshold voltage in triple material gate nanosheet MOSFETs. - E. Rajalakshmi; N. B. Balamurugan; M. Suguna; D. Sriram Kumar (Microelectron. J., 2025)