Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme. - Wei-Chih Chien; Lynne M. Gignac; Y. C. Chou; C. H. Yang; N. Gong; H. Y. Ho; C. W. Yeh; H. Y. Cheng; W. Kim; I. T. Kuo; E. K. Lai; C. W. Cheng; et al. (IRPS, 2022)

A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications. - Wei-Chih Chien; E. K. Lai; L. Buzi; C. W. Cheng; C. W. Yeh; A. Ray; Lynne M. Gignac; N. Gong; Huai-Yu Cheng; Alexander Grun; D. Y. Lee; W. Kim; et al. (IMW, 2023)