A Novel LG = 40 nm AlN-GDC-HEMT on SiC Wafer With fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers. - B. Mounika; Asisa Kumar Panigrahy; J. Ajayan; N. Khadar Basha; Vakkalakula Bharath Sreenivasulu; M. Durga Prakash; Sandip Bhattacharya; D. Nirmal (IEEE Access, 2024)