Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications. - N. Mohankumar 002; Binit Syamal; Chandan Kumar Sarkar (Microelectron. Reliab., 2009)

Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions. - Kalyan Koley; Binit Syamal; Atanu Kundu 001; N. Mohankumar 002; Chandan Kumar Sarkar (Microelectron. Reliab., 2012)

Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric. - D. Nirmal; P. Vijayakumar 003; K. Shruti; N. Mohankumar 002 (Int. J. Circuit Theory Appl., 2013)

Proficient Node Scheduling Protocol for Homogeneous and Heterogeneous Wireless Sensor Networks. - Radhakrishnan Saravanakumar; N. Mohankumar 002; J. Raja (Int. J. Distributed Sens. Networks, 2013)

Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics. - D. Nirmal; P. Vijayakumar 003; Divya Mary Thomas; Binola K. Jebalin; N. Mohankumar 002 (Microelectron. Reliab., 2013)

Simulation of flicker noise in gate-all-around Silicon Nanowire MOSFETs including interface traps. - P. Anandan 003; A. Nithya; N. Mohankumar 002 (Microelectron. Reliab., 2014)

Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs. - Sudhansu Kumar Pati; Kalyan Koley; Arka Dutta; N. Mohankumar 002; Chandan Kumar Sarkar (Microelectron. Reliab., 2014)

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. - Binola K. Jebalin; A. Shobha Rekh; P. Prajoon; N. Mohankumar 002; D. Nirmal (Microelectron. J., 2015)