Extraction of Fowler-Nordheim parameters of thin SiO2 oxide film including polysilicon gate depletion: validation with an EEPROM memory cell. - Nadia Harabech; Rachid Bouchakour; Pierre Canet; Philippe Pannier; Jean-Pierre Sorbier (ISCAS, 2000)

Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect. - Rachid Bouchakour; Nadia Harabech; Pierre Canet; Philippe Boivin; Jean Michel Mirable (ISCAS (4), 2001)

EEPROM programming study-time and degradation aspects. - Pierre Canet; Rachid Bouchakour; Nadia Harabech; Philippe Boivin; Jean-Michel Mirabel (ISCAS (4), 2001)