The Potential of FinFETs for Analog and RF Circuit Applications. - Piet Wambacq; Bob Verbruggen; Karen Scheir; Jonathan Borremans; Morin Dehan; Dimitri Linten; Vincent De Heyn; Geert Van der Plas; Abdelkarim Mercha; Bertrand Parvais; Cedric Gustin; Vaidyanathan Subramanian; et al. (IEEE Trans. Circuits Syst. I Regul. Pap., 2007)

Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies. - Piet Wambacq; Abdelkarim Mercha; Karen Scheir; Bob Verbruggen; Jonathan Borremans; Vincent De Heyn; Steven Thijs; Dimitri Linten; Geert Van der Plas; Bertrand Parvais; Morin Dehan; Stefaan Decoutere; et al. (ISSCC, 2008)

Measurement and Analysis of Parasitic Capacitance in FinFETs with High-k Dielectrics and Metal-Gate Stack. - Abhisek Dixit; Anirban Bandhyopadhyay; Nadine Collaert; Kristin De Meyer; Malgorzata Jurczak (VLSI Design, 2009)

Circuit Design for Bias Compatibility in Novel FinFET-Based Floating-Body RAM. - Pavel Poliakov; Ankur Anchlia; Marie Garcia Bardon; Bram Rooseleer; Bart De Wachter; Nadine Collaert; Koen van der Zanden; Wim Dehaene; Diederik Verkest; Miguel Corbalan Miranda (IEEE Trans. Circuits Syst. II Express Briefs, 2010)

Micro-sized syringes for single-cell fluidic access integrated on a micro-electrode array CMOS chip. - Roeland Huys; Dries Braeken; Liesbeth Micholt; Danny Jans; Andim Stassen; Nadine Collaert; Josine Loo; Carmen Bartic; Kris Verstreken; Wolfgang Eberle (EMBC, 2011)

High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. - Valeria Kilchytska; Joaquín Alvarado; S. Put; Nadine Collaert; Eddy Simoen; Cor Claeys; Otilia Militaru; Guy Berger; Denis Flandre (Microelectron. Reliab., 2012)

Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies. - Trong Huynh Bao; Dmitry Yakimets; Julien Ryckaert; Ivan Ciofi; Rogier Baert; Anabela Veloso; Jürgen Bömmels; Nadine Collaert; Philippe Roussel; S. Demuynck; Praveen Raghavan; Abdelkarim Mercha; et al. (ESSDERC, 2014)

Silicon LEDs in FinFET technology. - Giulia Piccolo; Piet I. Kuindersma; Lars-Åke Ragnarsson; Raymond J. E. Hueting; Nadine Collaert; Jurriaan Schmitz (ESSDERC, 2014)

Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. - Maria Glória Caño de Andrade; João Antonio Martino; Marc Aoulaiche; Nadine Collaert; Eddy Simoen; Cor Claeys (Microelectron. Reliab., 2014)

Holisitic device exploration for 7nm node. - Praveen Raghavan; Marie Garcia Bardon; Doyoung Jang; P. Schuddinck; Dmitry Yakimets; Julien Ryckaert; Abdelkarim Mercha; Naoto Horiguchi; Nadine Collaert; Anda Mocuta; Dan Mocuta; Zsolt Tokei; et al. (CICC, 2015)

FinFET stressor efficiency on alternative wafer and channel orientations for the 14 nm node and below. - Geert Eneman; An De Keersgieter; Anda Mocuta; Nadine Collaert; Aaron Thean (ICICDT, 2015)

Lateral NWFET optimization for beyond 7nm nodes. - Dmitry Yakimets; Doyoung Jang; Praveen Raghavan; Geert Eneman; Hans Mertens; P. Schuddinck; Arindam Mallik; Marie Garcia Bardon; Nadine Collaert; Abdelkarim Mercha; Diederik Verkest; Aaron Thean; et al. (ICICDT, 2015)

ESD characterization of planar InGaAs devices. - Zhigang Ji; Dimitri Linten; Roman Boschke; Geert Hellings; S. H. Chen; AliReza Alian; D. Zhou; Yves Mols; Tsvetan Ivanov; Jacopo Franco; Ben Kaczer; X. Zhang; et al. (IRPS, 2015)

The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. - Abhitosh Vais; Koen Martens; Jacopo Franco; Dennis Lin; AliReza Alian; Philippe Roussel; S. Sioncke; Nadine Collaert; Aaron Thean; Marc M. Heyns; Guido Groeseneken; Kristin De Meyer (IRPS, 2015)

Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors. - Devin Verreck; Anne S. Verhulst; Bart Soree; Nadine Collaert; Anda Mocuta; Aaron Thean; Guido Groeseneken (ESSDERC, 2016)

Beyond-Si materials and devices for more Moore and more than Moore applications. - Nadine Collaert; AliReza Alian; Hiroaki Arimura; Geert Boccardi; Geert Eneman; Jacopo Franco; Tsvetan Ivanov; Dennis Lin; Jérôme Mitard; S. Ramesh; R. Rooyackers; Marc Schaekers; et al. (ICICDT, 2016)

Scaling CMOS beyond Si FinFET: an analog/RF perspective. - Bertrand Parvais; Geert Hellings; Marko Simicic; Pieter Weckx; Jérôme Mitard; Doyoung Jang; V. Deshpande; B. van Liempc; Anabela Veloso; A. Vandooren; Niamh Waldron; Piet Wambacq; et al. (ESSDERC, 2018)

Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling. - A. Vandooren; Liesbeth Witters; Jacopo Franco; Arindam Mallik; Bertrand Parvais; Z. Wu; Amey Walke; V. Deshpande; E. Rosseel; Andriy Hikavyy; W. Li; L. Peng; et al. (ICICDT, 2018)

Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. - Zhicheng Wu; Jacopo Franco; Dieter Claes; Gerhard Rzepa; Philippe J. Roussel; Nadine Collaert; Guido Groeseneken; Dimitri Linten; Tibor Grasser; Ben Kaczer (IRPS, 2019)

Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications. - Dongyang Yan; Mark Ingels; Giovanni Mangraviti; Yao Liu; Bertrand Parvais; Niamh Waldron; Nadine Collaert; Piet Wambacq (NEWCAS, 2019)

Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. - Vamsi Putcha; Erik Bury; Jacopo Franco; Amey Walke; Simeng Zhao; Uthayasankaran Peralagu; Ming Zhao; AliReza Alian; Ben Kaczer; Niamh Waldron; Dimitri Linten; Bertrand Parvais; et al. (IRPS, 2020)

1.3 Future Scaling: Where Systems and Technology Meet. - Nadine Collaert (ISSCC, 2020)

Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates. - Pieter Cardinael; Sachin Yadav 001; Ming Zhao; Martin Rack; Dimitri Lederer; Nadine Collaert; Bertrand Parvais; Jean-Pierre Raskin (ESSDERC, 2021)

InP / CMOS co-integration for energy efficient sub-THz communication systems. - Claude Desset; Nadine Collaert; Siddhartha Sinha; Giuseppe Gramegna (GLOBECOM (Workshops), 2021)

CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. - Sachin Yadav 001; Pieter Cardinael; Ming Zhao; Komal Vondkar; Uthayasankaran Peralagu; AliReza Alian; Ahmad Khaled; Sergej Makovejev; Enrique Ekoga; Dimitri Lederer; Jean-Pierre Raskin; Bertrand Parvais; et al. (ICICDT, 2021)

On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices. - Vamsi Putcha; Liang Cheng; AliReza Alian; Ming Zhao; Hai Lu; Bertrand Parvais; Niamh Waldron; Dimitri Linten; Nadine Collaert (IRPS, 2021)

A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies. - Abhitosh Vais; Brent Hsu; Olga Syshchyk; Hao Yu; AliReza Alian; Yves Mols; Komal Vondkar Kodandarama; Bernardette Kunert; Niamh Waldron; Eddy Simoen; Nadine Collaert (IRPS, 2021)

Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. - AliReza Alian; Raúl Rodríguez; Sachin Yadav 001; Uthayasankaran Peralagu; Arturo Sibaja Hernandez; Vamsi Putcha; Ming Zhao; Rana Y. El Kashlan; Bjorn Vermeersch; Hao Yu; Erik Bury; Ahmad Khaled; et al. (ESSDERC, 2022)

III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance. - Abhitosh Vais; Sachin Yadav 001; Yves Mols; Bjorn Vermeersch; Komal Vondkar Kodandarama; Marina Baryshnikova; G. Mannaert; R. Alcotte; Geert Boccardi; Piet Wambacq; Bertrand Parvais; R. Langer; et al. (ESSDERC, 2022)

Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications. - Vamsi Putcha; Hao Yu; Jacopo Franco; Sachin Yadav 001; AliReza Alian; Uthayasankaran Peralagu; Bertrand Parvais; Nadine Collaert (IRPS, 2022)

(Why do we need) Wireless Heterogeneous Integration (anyway?). - Michaël Peeters; S. Sinha; Xiao Sun; Claude Desset; Giuseppe Gramegna; John Slabbekoorn; Pieter Bex; Nelson Pinho; Tomas Webers; Dimitrios Velenis; Andy Miller; Nadine Collaert; et al. (VLSI Technology and Circuits, 2022)

A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs. - Rana Y. El Kashlan; Hao Yu; Ahmad Khaled; Sachin Yadav 001; Uthayasankaran Peralagu; AliReza Alian; Nadine Collaert; Piet Wambacq; Bertrand Parvais (ESSDERC, 2023)

Process Development for a Novel Low Loss and Non-PFAS Photo Imageable Dielectric for RF Silicon Interposer Applications. - Hamideh Jafarpoorchekab; Xiao Sun; Angel Uruena; Siddhartha Sinha; Nelson Pinho; Andy Miller; Nadine Collaert (3DIC, 2024)

DC Reliability Study of $ text{high}- kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. - Barry J. O'Sullivan; AliReza Alian; Arturo Sibaja Hernandez; Jacopo Franco; Sachin Yadav 001; Hao Yu; Aarti Rathi; Uthayasankaran Peralagu; Adrian Vaisman Chasin; Bertrand Parvais; Nadine Collaert (IRPS, 2024)

Physical Insights into High Current Collapse under ON-state Stress in RF GaN HEMTs. - Amratansh Gupta; Hao Yu; Sachin Yadav 001; AliReza Alian; Uthavasankaran Peralagu; E.-San Jang; Ying-Chun Kuo; Nadine Collaert; Bertrand Parvais (IRPS, 2025)

Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave Applications. - Aarti Rathi; Barry J. O'Sullivan; R. ElKashlan; B. Kazemi Esfeh; Arturo Sibaja Hernandez; Hao Yu; AliReza Alian; Sachin Yadav 001; Uthayasankaran Peralagu; Adrian Vaisman Chasin; Bertrand Parvais; Nadine Collaert (IRPS, 2025)

Toward Understanding Stability of RF MIS-HEMTs Under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. - Yi Yang; Hao Yu; Meng-Che Tsai; Wei-Tung Lin; Ying-Chun Kuo; Barry J. O'Sullivan; Aarti Rathi; Amratansh Gupta; Sachin Yadav 001; AliReza Alian; Uthayasankaran Peralagu; Bertrand Parvais; et al. (IRPS, 2025)

Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. - Hao Yu; R. ElKashlan; Meng-Che Tsai; Yi Yang; Mamoun Guenach; Ying-Chun Kuo; Sachin Yadav 001; Barry J. O'Sullivan; Aarti Rathi; Amratansh Gupta; D. Xiao; Claude Desset; et al. (IRPS, 2025)