Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices. - Jing Zhu 006; Siyuan Yu; Yangyang Lu; Weifeng Sun; Chuanyi Cheng; Ding Yan; Yunwu Zhang; Shaohong Li; Long Zhang; Sen Zhang; Nailong He; Yan Gu (IEEE Trans. Ind. Electron., 2021)

Device and Circuit Design for Improving the Freewheeling Characteristics of High Voltage Monolithic Integrated Circuit. - Jing Zhu 006; Siyuan Yu; Guichuang Zhu; Weifeng Sun; Yunqi Wang; Yangyang Lu; Yunwu Zhang; Sen Zhang; Yan Gu; Nailong He (IEEE Trans. Ind. Electron., 2021)

A 400-V Half Bridge Gate Driver for Normally-Off GaN HEMTs With Effective Dv/Dt Control and High Dv/Dt Immunity. - Siyuan Yu; Qi Zhou; Gang Shi; Tianyang Wu; Jing Zhu 006; Long Zhang; Weifeng Sun; Sen Zhang; Nailong He; Ye Li (IEEE Trans. Ind. Electron., 2023)

A Rugged 1200V P-channel LDMOS in Bipolar-CMOS-DMOS Process with Global Potential Control Technology. - Chengwu Pan; Shipeng Chang; Jingjing Hong; Nailong He; Jie Ma; Sen Zhang; Long Zhang; Siyang Liu; Weifeng Sun (ICTA, 2024)

High Sensitivity Lateral Hall Device in Silicon on Insulator (SOI) Platform. - Guiqiang Zheng; Qingyin Zhong; Jie Ma; Yichen Li; Nannan Cheng; Nailong He; Sen Zhang; Yongjia Li; Long Zhang; Siyang Liu; Weifeng Sun (IEEE SENSORS, 2024)