A 1.1V 2y-nm 4.35Gb/s/pin 8Gb LPDDR4 mobile device with bandwidth improvement techniques. - Keunsoo Song; Sangkwon Lee; Dongkyun Kim; Youngbo Shim; Sangil Park; Bokrim Ko; Duckhwa Hong; Yongsuk Joo; Wooyoung Lee; Yongdeok Cho; Wooyeol Shin; Jaewoong Yun; et al. (CICC, 2014)

A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques. - Keunsoo Song; Sangkwon Lee; Dongkyun Kim; Youngbo Shim; Sangil Park; Bokrim Ko; Duckhwa Hong; Yongsuk Joo; Wooyoung Lee; Yongdeok Cho; Wooyeol Shin; Jaewoong Yun; et al. (IEEE J. Solid State Circuits, 2015)