Rapid Growth of SiO2 on SiC with Low Ditusing High Pressure Microwave Oxygen Plasma. - Shengkai Wang; Jilong Hao; Nannan You; Yun Bai; Xinyu Liu (ASICON, 2019)

Ge-doped In2O3: First Demonstration of Utlizing Ge as Oxygen Vacancy Consumer to Break the Mobility/Reliability Tradeoff for High Performance Oxide TFTs. - Jiayi Wang; Ziheng Bai; Kuo Zhang; Zhicheng Wu; Di Geng; Yang Xu; Nannan You; Yuxuan Li; Guanhua Yang; Ling Li 013; Shengkai Wang; Ming Liu 022 (VLSI Technology and Circuits, 2024)