A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs. - Hisao Shigematsu; Masaru Sato 001; Toshihide Suzuki; Tsuyoshi Takahashi; Kenji Imanishi; Naoki Hara; Hiroaki Ohnishi; Yuu Watanaba (IEEE J. Solid State Circuits, 2001)

Performance Analysis of a 10-Gb/s Millimeter-Wave Impulse Radio Transmitter. - Yasuhiro Nakasha; Naoki Hara; Kiyomichi Araki (IEICE Trans. Electron., 2011)

Submillimeter-wave InP HEMT amplifiers with current-reuse topology. - Masaru Sato 001; Shoichi Shiba; Hiroshi Matsumura; Tsuyoshi Takahashi; Toshihide Suzuki; Yasuhiro Nakasha; Naoki Hara (RWS, 2013)

Foreword. - Naoki Hara (IEICE Trans. Electron., 2015)

Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis. - Shoichi Shiba; Masaru Sato 001; Hiroshi Matsumura; Yoichi Kawano; Tsuyoshi Takahashi; Toshihide Suzuki; Yasuhiro Nakasha; Taisuke Iwai; Naoki Hara (IEICE Trans. Electron., 2015)

300-GHz Amplifier in 75-nm InP HEMT Technology. - Hiroshi Matsumura; Yoichi Kawano; Shoichi Shiba; Masaru Sato 001; Toshihide Suzuki; Yasuhiro Nakasha; Tsuyoshi Takahashi; Kozo Makiyama; Taisuke Iwai; Naoki Hara (IEICE Trans. Electron., 2016)

Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. - Masaru Sato 001; Yoshitaka Niida; Toshihide Suzuki; Yasuhiro Nakasha; Yoichi Kawano; Taisuke Iwai; Naoki Hara; Kazukiyo Joshin (IEICE Trans. Electron., 2017)

Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier. - Masaru Sato 001; Yusuke Kumazaki; Naoya Okamoto; Toshihiro Ohki; Naoko Kurahashi; Masato Nishimori; Atsushi Yamada; Junji Kotani; Naoki Hara; Keiji Watanabe (IEICE Trans. Electron., 2023)

High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. - Yusuke Kumazaki; Shiro Ozaki; Naoya Okamoto; Naoki Hara; Yasuhiro Nakasha; Masaru Sato 001; Toshihiro Ohki (IEICE Trans. Electron., 2023)