A CW 4-W Ka-band power amplifier utilizing MMIC multichip technology. - Kohji Matsunaga; Ikuo Miura; Naotaka Iwata (IEEE J. Solid State Circuits, 2000)

High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station. - Kouji Ishikura; Isao Takenaka; Hidemasa Takahashi; Kouichi Hasegawa; Kazunori Asano; Naotaka Iwata (IEICE Trans. Electron., 2007)

1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET. - Fumio Harima; Yasunori Bito; Hidemasa Takahashi; Naotaka Iwata (IEICE Trans. Electron., 2008)