High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations. - Akio Wakejima; Kohji Matsunaga; Yuji Ando; Tatsuo Nakayama; Yasuhiro Okamoto; Kazuki Ota; Naotaka Kuroda; Masahiro Tanomura; Hironobu Miyamoto (IEICE Trans. Electron., 2007)

Switching Time Characterization and Modeling of AlN/GaN MIS-HEMTs. - Hitoshi Aoki; Hiroyuki Sakairi; Naotaka Kuroda; Kentaro Chikamatsu; Ken Nakahara (ICIT, 2019)

Influence of Device Parameter Variability on Current Sharing of Parallel-Connected SiC MOSFETs. - Yohei Nakamura; Naotaka Kuroda; Atsushi Yamaguchi; Ken Nakahara; Michihiro Shintani; Takashi Sato 001 (ATS, 2020)

Geometry Independent Hole Injection Current Model of GaN Ridge HEMTs. - Hitoshi Aoki; Hiroyuki Sakairi; Naotaka Kuroda; Atsushi Yamaguchi; Ken Nakahara (ISIE, 2021)

Biotinylated Quinone as a Chemiluminescence Sensor for Biotin-Avidin Interaction and Biotin Detection Application. - Fatema Kaladari; Mahmoud El-Maghrabey; Megumi Kawazato; Naoya Kishikawa; Naotaka Kuroda (Sensors, 2023)

Parasitic Transistor with Hole Injection Current Modeling of AlGaN/GaN Ridge HEMTs. - Hitoshi Aoki; Naotaka Kuroda; Atsushi Yamaguchi; Ken Nakahara (ICECET, 2024)