Systematic study of thermal stability of AlGaN/GaN two-dimensional electron gas structure with SiN surface passivation. - Kenji Shiojima; Suehiro Sugitani; Naoteru Shigekawa (IEICE Electron. Express, 2004)

SAW characteristics of GaN layers with surfaces exposed by dry etching. - Kazumi Nishimura; Naoteru Shigekawa; Haruki Yokoyama; Masanobu Hiroki; Kohji Hohkawa (IEICE Electron. Express, 2005)

Velocity dispersion in GaN-based surface acoustic wave filters on (0001) sapphire substrates. - Naoteru Shigekawa; Kazumi Nishimura; Haruki Yokoyama; Kenji Shiojima; Kohji Hohkawa (IEICE Electron. Express, 2005)

Numerical analysis of impact of stress in passivation films on electrical properties in AlGaN/GaN heterostructures. - Naoteru Shigekawa; Suehiro Sugitani (IEICE Electron. Express, 2009)

Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness. - Masanobu Hiroki; Narihiko Maeda; Naoteru Shigekawa (IEICE Trans. Electron., 2010)

Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs. - Naoteru Shigekawa; Suehiro Sugitani (IEICE Trans. Electron., 2010)