A 64-Mb DRAM with meshed power line. - Toshio Yamada; Yoshiro Nakata; Junko Hasegawa; Noriaki Amano; Akinori Shibayama; Masaru Sasago; Naoto Matsuo; Toshiki Yabu; Susumu Matsumoto; Shozo Okada; Michihiro Inoue (IEEE J. Solid State Circuits, 1991)

Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing. - Naoya Kawamoto; Naoto Matsuo; Atsushi Masuda; Yoshitaka Kitamon; Hideki Matsumura; Yasunori Harada; Tadaki Miyoshi; Hiroki Hamada (IEICE Trans. Electron., 2005)

Fabrication of tunneling dielectric thin-film transistor with very thin SiNx films onto source and drain. - Naoto Matsuo; Atsushi Fukushima; Kensaku Ohkura; Akira Heya; Shin Yokoyama (IEICE Electron. Express, 2007)

Properties of SiO2 Surface and Pentacene OTFT Subjected to Atomic Hydrogen Annealing. - Akira Heya; Naoto Matsuo (IEICE Trans. Electron., 2010)

Dependence of electrical properties of pentacene Thin-Film Transistor on active layer thickness. - Naoto Matsuo; Akira Heya (IEICE Electron. Express, 2011)

Study of charge retention mechanism for DNA memory FET. - Shoko Maeno; Naoto Matsuo; Shohei Nakamura; Akira Heya; Tadao Takada; Kazushige Yamana; Masataka Fukuyama; Shin Yokoyama (IEICE Electron. Express, 2014)

Improvement of Hump Phenomenon of Thin-Film Transistor by SiNX Film. - Takahiro Kobayashi; Naoto Matsuo; Akira Heya; Shin Yokoyama (IEICE Trans. Electron., 2014)

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation. - Akira Heya; Naoto Matsuo; Kazuhiro Kanda (IEICE Trans. Electron., 2016)

Ambipolar Conduction of λ-DNA Transistor Fabricated on SiO2/Si Structure. - Naoto Matsuo; Kazuki Yoshida; Koji Sumitomo; Kazushige Yamana; Tetsuo Tabei (IEICE Trans. Electron., 2022)

Influence of the Gate Voltage or the Base Pair Ratio Modulation on the λ-DNA FET Performance. - Naoto Matsuo; Akira Heya; Kazushige Yamana; Koji Sumitomo; Tetsuo Tabei (IEICE Trans. Electron., 2024)