An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process. - Isao Takayanagi; Norio Yoshimura; Kazuya Mori; Shinichiro Matsuo; Shunsuke Tanaka; Hirofumi Abe; Naoto Yasuda; Kenichiro Ishikawa; Shunsuke Okura; Shinji Ohsawa; Toshinori Otaka (Sensors, 2018)

A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel. - Ken Miyauchi; Kazuya Mori; Toshinori Otaka; Toshiyuki Isozaki; Naoto Yasuda; Alex Tsai; Yusuke Sawai; Hideki Owada; Isao Takayanagi; Junichi Nakamura (Sensors, 2020)