Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. - Naoufel Ismail; Nathalie Malbert; Nathalie Labat; André Touboul; Jean-Luc Muraro; F. Brasseau; D. Langrez (Microelectron. Reliab., 2005)

Design and characterisation of a new GaN/AlGaN HEMT transistor. - Naji Guedri; Naoufel Ismail; Rached Gharbi (Int. J. Model. Identif. Control., 2021)