Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure. - Seikoh Yoshida; Nariaki Ikeda; Jiang Li; Takahiro Wada; Hironari Takehara (IEICE Trans. Electron., 2005)

GaN Power Transistors on Si Substrates for Switching Applications. - Nariaki Ikeda; Yuki Niiyama; Hiroshi Kambayashi; Yoshihiro Sato; Takehiko Nomura; Sadahiro Kato; Seikoh Yoshida (Proc. IEEE, 2010)