Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. - Benoit Lambert; Nathalie Malbert; Nathalie Labat; Frédéric Verdier; André Touboul; P. Huguet; R. Bonnet; G. Pataut (Microelectron. Reliab., 2001)

Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. - Nathalie Labat; Nathalie Malbert; Benoit Lambert; André Touboul; F. Garat; B. Proust (Microelectron. Reliab., 2002)

High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. - Mohamed Belhaj; Cristell Maneux; Nathalie Labat; André Touboul; Philippe Bove (Microelectron. Reliab., 2003)

Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. - Arnaud Curutchet; Nathalie Malbert; Nathalie Labat; André Touboul; Christophe Gaquière; A. Minko; Michael J. Uren (Microelectron. Reliab., 2003)

Editorial. - Nathalie Labat; André Touboul (Microelectron. Reliab., 2003)

1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses. - J. C. Martin; Cristell Maneux; Nathalie Labat; André Touboul; Muriel Riet; S. Blayac; M. Kahn; Jean Godin (Microelectron. Reliab., 2003)

On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise. - Brice Grandchamp; Cristell Maneux; Nathalie Labat; André Touboul; Thomas Zimmer (Microelectron. Reliab., 2004)

Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors. - Nathalie Labat; Nathalie Malbert; Cristell Maneux; André Touboul (Microelectron. Reliab., 2004)

Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. - Naoufel Ismail; Nathalie Malbert; Nathalie Labat; André Touboul; Jean-Luc Muraro; F. Brasseau; D. Langrez (Microelectron. Reliab., 2005)

Editorial. - Nathalie Labat (Microelectron. Reliab., 2005)

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. - A. Sozza; Arnaud Curutchet; Christian Dua; Nathalie Malbert; Nathalie Labat; André Touboul (Microelectron. Reliab., 2006)

Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC. - Mohsine Bouya; D. Carisetti; Nathalie Malbert; Nathalie Labat; Philippe Perdu; J. C. Clement; M. Bonnet; G. Pataut (Microelectron. Reliab., 2007)

Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. - Mustapha Faqir; Giovanni Verzellesi; Fausto Fantini; Francesca Danesin; Fabiana Rampazzo; Gaudenzio Meneghesso; Enrico Zanoni; Anna Cavallini; Antonio Castaldini; Nathalie Labat; André Touboul; Christian Dua (Microelectron. Reliab., 2007)

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. - Mohsine Bouya; Nathalie Malbert; Nathalie Labat; D. Carisetti; Philippe Perdu; J. C. Clement; Benoit Lambert; M. Bonnet (Microelectron. Reliab., 2008)

Editorial. - Dean Lewis; Nathalie Labat (Microelectron. Reliab., 2009)

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. - Nathalie Malbert; Nathalie Labat; Arnaud Curutchet; C. Sury; V. Hoel; J.-C. de Jaeger; Nicolas Defrance; Y. Douvry; Christian Dua; Mourad Oualli; C. Bru-Chevallier; Jean-Marie Bluet; et al. (Microelectron. Reliab., 2009)

Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing. - A. Aubert; J. P. Rebrasse; Lionel Dantas de Morais; Nathalie Labat; Hélène Frémont (Microelectron. Reliab., 2010)

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. - Mustapha Faqir; Mohsine Bouya; Nathalie Malbert; Nathalie Labat; D. Carisetti; Benoit Lambert; Giovanni Verzellesi; Fausto Fantini (Microelectron. Reliab., 2010)

Preliminary results of storage accelerated aging test on InP/InGaAs DHBT. - G. A. Koné; Brice Grandchamp; C. Hainaut; François Marc; Cristell Maneux; Nathalie Labat; Thomas Zimmer; Virginie Nodjiadjim; Jean Godin (Microelectron. Reliab., 2010)

Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow. - A. Aubert; Sébastien Jacques; S. Pétremont; Nathalie Labat; Hélène Frémont (Microelectron. Reliab., 2011)

Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses. - G. A. Koné; Brice Grandchamp; C. Hainaut; François Marc; Cristell Maneux; Nathalie Labat; Thomas Zimmer; Virginie Nodjiadjim; Muriel Riet; Jean Godin (Microelectron. Reliab., 2011)

Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. - Laurent Brunel; Nathalie Malbert; Arnaud Curutchet; Nathalie Labat; Benoit Lambert (ESSDERC, 2012)

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. - Benoit Lambert; Nathalie Labat; Dominique Carisetti; Serge Karboyan; Jean-Guy Tartarin; Jim Thorpe; Laurent Brunel; Arnaud Curutchet; Nathalie Malbert; Eddy Latu-Romain; Michel Mermoux (Microelectron. Reliab., 2012)

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. - Laurent Brunel; Benoit Lambert; P. Mezenge; J. Bataille; D. Floriot; Jan Grünenpütt; Hervé Blanck; D. Carisetti; Y. Gourdel; Nathalie Malbert; Arnaud Curutchet; Nathalie Labat (Microelectron. Reliab., 2013)

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. - S. Karboyan; Jean-Guy Tartarin; M. Rzin; Laurent Brunel; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat; D. Carisetti; Benoit Lambert; M. Mermoux; E. Romain-Latu; F. Thomas; et al. (Microelectron. Reliab., 2013)

Editorial. - Nathalie Labat; François Marc (Microelectron. Reliab., 2013)

Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques. - W. Ben Naceur; Nathalie Malbert; Nathalie Labat; Hélène Frémont; D. Carisetti; J. C. Clement; J. L. Muraro; Barbara Bonnet (Microelectron. Reliab., 2013)

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. - M. Rzin; Nathalie Labat; Nathalie Malbert; Arnaud Curutchet; Laurent Brunel; Benoit Lambert (Microelectron. Reliab., 2015)

Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes. - Pamela Del Vecchio; Arnaud Curutchet; Yannick Deshayes; M. Bettiati; F. Laruelle; Nathalie Labat; Laurent Béchou (Microelectron. Reliab., 2015)

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. - H. Lakhdhar; Nathalie Labat; Arnaud Curutchet; Nicolas Defrance; Marie Lesecq; Jean-Claude de Jaeger; Nathalie Malbert (Microelectron. Reliab., 2016)

Proceedings of the 28th European Symposium on the reliability of electron devices, failure physics and analysis. - Nathalie Labat; François Marc; Hélène Frémont; Marise Bafleur (Microelectron. Reliab., 2017)

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. - Kalparupa Mukherjee; Frédéric Darracq; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat (Microelectron. Reliab., 2017)

Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. - Kalparupa Mukherjee; Frédéric Darracq; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat (IRPS, 2018)

Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications. - N. Said; Kathia Harrouche; Farid Medjdoub; Nathalie Labat; Jean-Guy Tartarin; Nathalie Malbert (IRPS, 2023)