Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. - Benoit Lambert; Nathalie Malbert; Nathalie Labat; Frédéric Verdier; André Touboul; P. Huguet; R. Bonnet; G. Pataut (Microelectron. Reliab., 2001)

Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. - Nathalie Labat; Nathalie Malbert; Benoit Lambert; André Touboul; F. Garat; B. Proust (Microelectron. Reliab., 2002)

Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. - Arnaud Curutchet; Nathalie Malbert; Nathalie Labat; André Touboul; Christophe Gaquière; A. Minko; Michael J. Uren (Microelectron. Reliab., 2003)

Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors. - Nathalie Labat; Nathalie Malbert; Cristell Maneux; André Touboul (Microelectron. Reliab., 2004)

Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. - Naoufel Ismail; Nathalie Malbert; Nathalie Labat; André Touboul; Jean-Luc Muraro; F. Brasseau; D. Langrez (Microelectron. Reliab., 2005)

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. - A. Sozza; Arnaud Curutchet; Christian Dua; Nathalie Malbert; Nathalie Labat; André Touboul (Microelectron. Reliab., 2006)

Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC. - Mohsine Bouya; D. Carisetti; Nathalie Malbert; Nathalie Labat; Philippe Perdu; J. C. Clement; M. Bonnet; G. Pataut (Microelectron. Reliab., 2007)

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. - Mohsine Bouya; Nathalie Malbert; Nathalie Labat; D. Carisetti; Philippe Perdu; J. C. Clement; Benoit Lambert; M. Bonnet (Microelectron. Reliab., 2008)

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. - Nathalie Malbert; Nathalie Labat; Arnaud Curutchet; C. Sury; V. Hoel; J.-C. de Jaeger; Nicolas Defrance; Y. Douvry; Christian Dua; Mourad Oualli; C. Bru-Chevallier; Jean-Marie Bluet; et al. (Microelectron. Reliab., 2009)

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. - Mustapha Faqir; Mohsine Bouya; Nathalie Malbert; Nathalie Labat; D. Carisetti; Benoit Lambert; Giovanni Verzellesi; Fausto Fantini (Microelectron. Reliab., 2010)

Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. - Laurent Brunel; Nathalie Malbert; Arnaud Curutchet; Nathalie Labat; Benoit Lambert (ESSDERC, 2012)

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. - Benoit Lambert; Nathalie Labat; Dominique Carisetti; Serge Karboyan; Jean-Guy Tartarin; Jim Thorpe; Laurent Brunel; Arnaud Curutchet; Nathalie Malbert; Eddy Latu-Romain; Michel Mermoux (Microelectron. Reliab., 2012)

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. - Laurent Brunel; Benoit Lambert; P. Mezenge; J. Bataille; D. Floriot; Jan Grünenpütt; Hervé Blanck; D. Carisetti; Y. Gourdel; Nathalie Malbert; Arnaud Curutchet; Nathalie Labat (Microelectron. Reliab., 2013)

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. - S. Karboyan; Jean-Guy Tartarin; M. Rzin; Laurent Brunel; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat; D. Carisetti; Benoit Lambert; M. Mermoux; E. Romain-Latu; F. Thomas; et al. (Microelectron. Reliab., 2013)

Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques. - W. Ben Naceur; Nathalie Malbert; Nathalie Labat; Hélène Frémont; D. Carisetti; J. C. Clement; J. L. Muraro; Barbara Bonnet (Microelectron. Reliab., 2013)

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. - M. Rzin; Nathalie Labat; Nathalie Malbert; Arnaud Curutchet; Laurent Brunel; Benoit Lambert (Microelectron. Reliab., 2015)

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. - H. Lakhdhar; Nathalie Labat; Arnaud Curutchet; Nicolas Defrance; Marie Lesecq; Jean-Claude de Jaeger; Nathalie Malbert (Microelectron. Reliab., 2016)

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. - Kalparupa Mukherjee; Frédéric Darracq; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat (Microelectron. Reliab., 2017)

Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. - Kalparupa Mukherjee; Frédéric Darracq; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat (IRPS, 2018)

Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications. - N. Said; Kathia Harrouche; Farid Medjdoub; Nathalie Labat; Jean-Guy Tartarin; Nathalie Malbert (IRPS, 2023)