256-Mb DRAM circuit technologies for file applications. - Goro Kitsukawa; Masashi Horiguchi; Yoshiki Kawajiri; Takayuki Kawahara; Takesada Akiba; Yasushi Kawase; Toshikazu Tachibana; Takeshi Sakai; Masakazu Aoki; Syoji Shukuri; Kazuhiko Sagara; Ryo Nagai; et al. (IEEE J. Solid State Circuits, 1993)

An experimental 220-MHz 1-Gb DRAM with a distributed-column-control architecture. - Takeshi Sakata; Masashi Horiguchi; Tomonori Sekiguchi; Shigeki Ueda; Hitoshi Tanaka; Eiji Yamasaki; Yoshinobu Nakagome; Masakazu Aoki; Toru Kaga; Makoto Ohkura; Ryo Nagai; Fumio Murai; et al. (IEEE J. Solid State Circuits, 1995)