Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs. - Kyle J. Liddy; Nolan S. Hendricks; Andrew J. Green; Andreas Popp; Miles T. Lindquist; Kevin D. Leedy; Stephen E. Tetlak; Neil A. Moser; Günter Wagner; Kelson D. Chabak; Gregg H. Jessen (DRC, 2019)

Hysteresis-free MOSCAP made with Al2O3/(010)β-Ga2O3 interface using a combination of surface cleaning, etching and post-deposition annealing. - A. E. Islam; Kevin D. Leedy; Neil A. Moser; S. Ganguli; Kyle J. Liddy; Andrew J. Green; Kelson D. Chabak (DRC, 2021)

The $R_{ text{ON}}-V_{ text{BK}}$ Relationship in $ beta$-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation. - S. Ahmed; A. E. Islam; Daniel Dryden; Kyle J. Liddy; Nolan S. Hendricks; Neil A. Moser; Kelson D. Chabak; Andrew J. Green (DRC, 2023)