Circuit-Level Safe-Operating-Area of a High-Speed SiGe BiCMOS Wireline Driver. - Arya Moradinia; Rafael Perez Martinez; Jeffrey W. Teng; Nelson Sepúlveda-Ramos; Harrison Lee 002; John D. Cressler (BCICTS, 2020)

Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs. - Harrison P. Lee; Jeffrey W. Teng; Nelson Sepúlveda-Ramos; John D. Cressler (BCICTS, 2021)

Performance vs. Reliability Tradeoffs of Medium Breakdown and High Performance Cascode Amplifier Cells. - Harrison Lee 002; Arya Moradinia; Jeffrey W. Teng; Nelson Sepúlveda-Ramos; John D. Cressler (BCICTS, 2022)

Improved Electrical Reliability and Performance Enhancements in SiGe HBTs Using Dummy BEOL Metal Layers. - Nelson Sepúlveda-Ramos; Jeffrey W. Teng; Harrison Lee 002; John D. Cressler (BCICTS, 2022)

The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs. - Harrison P. Lee; Nelson Sepúlveda-Ramos; Jeffrey W. Teng; Jackson P. Moody; Delgermaa Nergui; Brett L. Ringel; Zachary R. Brumbach; Alizeh Premani; Uppili S. Raghunathan; Vibhor Jain; John D. Cressler (BCICTS, 2023)

Using Pulsed-Mode Measurements of SiGe HBTs for Non-Destructive, Improved RF-SOA Estimation. - Nelson Sepúlveda-Ramos; Harrison P. Lee; Jeffrey W. Teng; John D. Cressler (BCICTS, 2024)

Anomalous Mixed-Mode Damage Effects in SiGe HBTs at Cryogenic Temperatures. - Harrison P. Lee; Delgermaa Nergui; Jeffrey W. Teng; Jackson P. Moody; Nelson Sepúlveda-Ramos; John D. Cressler (IRPS, 2024)