Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro. - Trang Le Dinh Dang; Trinh Dinh Linh; Ngyuen Thanh Dat; Changhong Min; Jinsang Kim; Ik-Joon Chang; Jin-Woo Han (IRPS, 2020)