Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness. - Dongyoung Kim; Adam J. Morgan; Nick Yun; Woongje Sung; Anant Agarwal; Robert Kaplar (IRPS, 2020)

Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study. - Dongyoung Kim; Nick Yun; Woongje Sung (IRPS, 2021)

Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs. - Dongyoung Kim; Skylar DeBoer; Stephen A. Mancini; Sundar Babu Isukapati; Justin Lynch; Nick Yun; Adam J. Morgan; Seung Yup Jang; Woongje Sung (IRPS, 2023)