Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. - Nathalie Malbert; Nathalie Labat; Arnaud Curutchet; C. Sury; V. Hoel; J.-C. de Jaeger; Nicolas Defrance; Y. Douvry; Christian Dua; Mourad Oualli; C. Bru-Chevallier; Jean-Marie Bluet; et al. (Microelectron. Reliab., 2009)

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate. - Alain Agboton; Nicolas Defrance; Phillipe Altuntas; Vannessa Avramovic; Adrien Cutivet; Rezky Ouhachi; Jean-Claude de Jaeger; Samira Bouzid-Driad; Hassan Maher; Michel Renvoise; Peter Frijlink (ESSDERC, 2013)

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. - H. Lakhdhar; Nathalie Labat; Arnaud Curutchet; Nicolas Defrance; Marie Lesecq; Jean-Claude de Jaeger; Nathalie Malbert (Microelectron. Reliab., 2016)

Temperature monitoring of short-gate length AlGaN/GaN HEMT via an integrated sensor. - Flavien Cozette; Marie Lesecq; Nicolas Defrance; Michel Rousseau; Jean-Claude de Jaeger; Adrien Cutivet; Hassan Maher (ESSDERC, 2018)