Constant voltage electromigration for advanced BEOL copper interconnects. - Baojun Tang; Kris Croes; Nicolas Jourdan 002; Jürgen Bömmels; Zsolt Tökei; Ingrid De Wolf; Eric Wilcox; Timothy McMullen (IRPS, 2015)

Dielectric Reliability Study of 21 nm Pitch Interconnects with Barrierless Ru Fill. - Alicja Lesniewska; Philippe J. Roussel; Davide Tierno; Victor Vega-Gonzalez; Marleen H. van der Veen; Patrick Verdonck; Nicolas Jourdan 002; Christopher J. Wilson; Zsolt Tökei; Kris Croes (IRPS, 2020)

Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET. - Hiroaki Arimura; S. Brus; Jacopo Franco; Yusuke Oniki; A. Vandooren; T. Conard; B. T. Chan; B. Kannan; M. Samiee; W. Li; P. Deminskyi; E. Shero; et al. (VLSI Technology and Circuits, 2023)

Monolithic Complementary Field Effect Transistors (CFET) Demonstrated using Middle Dielectric Isolation and Stacked Contacts. - Steven Demuynck; Victor Vega-Gonzalez; C. Toledo de Carvalho Cavalcante; L. Petersen Barbosa Lima; K. Stiers; C. Sheng; A. Vandooren; M. Hosseini; X. Zhou; Hans Mertens; Thomas Chiarella; Jürgen Bömmels; et al. (VLSI Technology and Circuits, 2024)

Backside Power Delivery with relaxed overlay for backside patterning using extreme wafer thinning and Molybdenum-filled slit nano Through Silicon Vias. - P. Zhao; Liesbeth Witters; Anne Jourdain; Michele Stucchi; Nicolas Jourdan 002; J. W. Maes; H. Bana; C. Zhu; R. Chukka; F. Sebaai; Kevin Vandersmissen; N. Heylen; et al. (VLSI Technology and Circuits, 2024)