Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology. - Géraldine Bertrand; Christelle Delage; Marise Bafleur; Nicolas Nolhier; Jean-Marie Dorkel; Quang Nguyen; Nicolas Mauran; David Trémouilles; Philippe Perdu (IEEE J. Solid State Circuits, 2001)

Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency. - David Trémouilles; Marise Bafleur; Géraldine Bertrand; Nicolas Nolhier; Nicolas Mauran; Lionel Lescouzères (IEEE J. Solid State Circuits, 2004)

ESD failure signature in capacitive RF MEMS switches. - Jinyu Jason Ruan; George J. Papaioannou; Nicolas Nolhier; Nicolas Mauran; Marise Bafleur; Fabio Coccetti; Robert Plana (Microelectron. Reliab., 2008)

An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices. - Jinyu Jason Ruan; Nicolas Monnereau; David Trémouilles; Nicolas Mauran; Fabio Coccetti; Nicolas Nolhier; Robert Plana (IEEE Trans. Instrum. Meas., 2012)

On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress. - Fabrice Caignet; Nicolas Nolhier; Marise Bafleur; A. Wang; Nicolas Mauran (Microelectron. Reliab., 2013)

20 GHz on-chip measurement of ESD waveform for system level analysis. - Fabrice Caignet; Nicolas Nolhier; Marise Bafleur; A. Wang; Nicolas Mauran (Microelectron. Reliab., 2015)

Low Latency Demodulation for High-Frequency Atomic Force Microscopy Probes. - Denis Lagrange; Nicolas Mauran; Lucien Schwab; Bernard Legrand (IEEE Trans. Control. Syst. Technol., 2021)