The mirrored lateral SCR (MILSCR) as an ESD protection structure: design and optimization using 2-D device simulation. - Christelle Delage; Nicolas Nolhier; Marise Bafleur; Jean-Marie Dorkel; Jo Hamid; Philippe Givelin; Jacques Lin-Kwang (IEEE J. Solid State Circuits, 1999)

Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology. - Géraldine Bertrand; Christelle Delage; Marise Bafleur; Nicolas Nolhier; Jean-Marie Dorkel; Quang Nguyen; Nicolas Mauran; David Trémouilles; Philippe Perdu (IEEE J. Solid State Circuits, 2001)

Determination of the ESD Failure Cause Through its Signature. - M. Zecri; P. Besse; Philippe Givelin; M. Nayrolles; Marise Bafleur; Nicolas Nolhier (Microelectron. Reliab., 2003)

Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency. - David Trémouilles; Marise Bafleur; Géraldine Bertrand; Nicolas Nolhier; Nicolas Mauran; Lionel Lescouzères (IEEE J. Solid State Circuits, 2004)

Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications. - Nicolas Guitard; David Trémouilles; Marise Bafleur; Laurent Escotte; Laurent Bary; Philippe Perdu; Gérard Sarrabayrouse; Nicolas Nolhier; Roberto Reyna-Rojas (Microelectron. Reliab., 2004)

Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure. - Nicolas Guitard; Fabien Essely; David Trémouilles; Marise Bafleur; Nicolas Nolhier; Philippe Perdu; André Touboul; Vincent Pouget; Dean Lewis (Microelectron. Reliab., 2005)

Electrostatic discharge failure analysis of capacitive RF MEMS switches. - Jinyu Jason Ruan; Nicolas Nolhier; Marise Bafleur; Laurent Bary; Fabio Coccetti; T. Lisec; Robert Plana (Microelectron. Reliab., 2007)

ESD failure signature in capacitive RF MEMS switches. - Jinyu Jason Ruan; George J. Papaioannou; Nicolas Nolhier; Nicolas Mauran; Marise Bafleur; Fabio Coccetti; Robert Plana (Microelectron. Reliab., 2008)

Accelerated lifetime test of RF-MEMS switches under ESD stress. - Jinyu Jason Ruan; Nicolas Nolhier; George J. Papaioannou; David Trémouilles; Vincent Puyal; C. Villeneuve; T. Idda; Fabio Coccetti; Robert Plana (Microelectron. Reliab., 2009)

An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices. - Jinyu Jason Ruan; Nicolas Monnereau; David Trémouilles; Nicolas Mauran; Fabio Coccetti; Nicolas Nolhier; Robert Plana (IEEE Trans. Instrum. Meas., 2012)

On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress. - Fabrice Caignet; Nicolas Nolhier; Marise Bafleur; A. Wang; Nicolas Mauran (Microelectron. Reliab., 2013)

Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation. - Nicolas Monnereau; Fabrice Caignet; David Trémouilles; Nicolas Nolhier; Marise Bafleur (Microelectron. Reliab., 2013)

Reliability of ESD protection devices designed in a 3D technology. - Bertrand Courivaud; Nicolas Nolhier; Gilles Ferru; Marise Bafleur; Fabrice Caignet (Microelectron. Reliab., 2014)

Editorial. - Marise Bafleur; Philippe Perdu; François Marc; Hélène Frémont; Nicolas Nolhier (Microelectron. Reliab., 2015)

20 GHz on-chip measurement of ESD waveform for system level analysis. - Fabrice Caignet; Nicolas Nolhier; Marise Bafleur; A. Wang; Nicolas Mauran (Microelectron. Reliab., 2015)

Impact of non-linear capacitances on transient waveforms during system level ESD stress. - Frédéric Escudié; Fabrice Caignet; Nicolas Nolhier; Marise Bafleur (Microelectron. Reliab., 2016)

Prediction of LIN communication robustness against EFT events using dedicated failure models. - Frédéric Escudié; Fabrice Caignet; Nicolas Nolhier; Marise Bafleur (Microelectron. Reliab., 2017)

Closed-Form Expressions of Electric and Magnetic Near-Fields for the Calibration of Near-Field Probes. - Alexandre Boyer; Nicolas Nolhier; Fabrice Caignet; Sonia Ben Dhia (IEEE Trans. Instrum. Meas., 2021)