Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test. - Nicolo Ronchi; Franco Zanon; Antonio Stocco; Augusto Tazzoli; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2009)

Breakdown investigation in GaN-based MIS-HEMT devices. - Fabio Alessio Marino; Davide Bisi; Matteo Meneghini; Giovanni Verzellesi; Enrico Zanoni; Marleen Van Hove; Shuzhen You; Stefaan Decoutere; Denis Marcon; Steve Stoffels; Nicolo Ronchi; Gaudenzio Meneghesso (ESSDERC, 2014)

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. - Jie Hu; Steve Stoffels; Silvia Lenci; Nicolo Ronchi; Rafael Venegas; Shuzhen You; Benoit Bakeroot; Guido Groeseneken; Stefaan Decoutere (Microelectron. Reliab., 2014)

New Insights into the Imprint Effect in FE-HfO2 and its Recovery. - Yusuke Higashi; Karine Florent; A. Subirats; Ben Kaczer; Luca Di Piazza; Sergiu Clima; Nicolo Ronchi; Sean R. C. McMitchell; Kaustuv Banerjee; Umberto Celano; Masamichi Suzuki; Dimitri Linten; et al. (IRPS, 2019)

Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. - K. Kaczmarek; Marie Garcia Bardon; Y. Xiang; Laurent Breuil; Nicolo Ronchi; Bertrand Parvais; Guido Groeseneken; Jan Van Houdt (IMW, 2021)

Impact of mechanical strain on wakeup of HfO2 ferroelectric memory. - Anastasiia Kruv; Sean R. C. McMitchell; Sergiu Clima; Oguzhan O. Okudur; Nicolo Ronchi; Geert Van den Bosch; Mario Gonzalez; Ingrid De Wolf; Jan Van Houdt (IRPS, 2021)

Analog In-memory Computing in FeFET-based 1T1R Array for Edge AI Applications. - Daisuke Saito; Toshiyuki Kobayashi; Hiroki Koga; Nicolo Ronchi; Kaustuv Banerjee; Yusuke Shuto; Jun Okuno; Kenta Konishi; Luca Di Piazza; Arindam Mallik; Jan Van Houdt; Masanori Tsukamoto; et al. (VLSI Circuits, 2021)

A comprehensive variability study of doped HfO2 FeFET for memory applications. - Nicolo Ronchi; Lars-Åke Ragnarsson; Umberto Celano; Ben Kaczer; K. Kaczmarek; K. Banerjee; Sean R. C. McMitchell; Geert Van den Bosch; Jan Van Houdt (IMW, 2022)

Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering. - Zhuo Chen; Nicolo Ronchi; Amey Walke; Kaustuv Banerjee; Mihaela Ioana Popovici; Kostantine Katcko; Geert Van den Bosch; Maarten Rosmeulen; Valeri Afanas'ev; Jan Van Houdt (IMW, 2023)