Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. - Isabella Rossetto; Matteo Meneghini; Vanessa Rizzato; Maria Ruzzarin; Andrea Favaron; Steve Stoffels; Marleen Van Hove; Niels Posthuma; Tian-Li Wu; Denis Marcon; Stefaan Decoutere; Gaudenzio Meneghesso; et al. (Microelectron. Reliab., 2016)

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation. - Ales Chvála; Juraj Marek; Patrik Pribytny; Alexander Satka; Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Daniel Donoval (Microelectron. Reliab., 2017)

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. - Isabella Rossetto; Matteo Meneghini; Eleonora Canato; Marco Barbato; Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Andrea Natale Tallarico; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2017)

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. - Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot; Andrea Natale Tallarico; Enrico Sangiorgi; Claudio Fiegna; J. Zheng; X. Ma; Matteo Borga; Elena Fabris; Matteo Meneghini; et al. (IRPS, 2019)

Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process. - Yuki Yamashita; Steve Stoffels; Niels Posthuma; Karen Geens; Xiangdong Li; Jun Furuta; Stefaan Decoutere; Kazutoshi Kobayashi (IEICE Electron. Express, 2019)

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. - Elena Fabris; Matteo Borga; Niels Posthuma; Ming Zhao; Brice De Jaeger; Shuzhen You; Stefaan Decoutere; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni (IRPS, 2021)

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. - M. Millesimo; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Claudio Fiegna; Andrea Natale Tallarico (IRPS, 2022)

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. - M. Millesimo; Claudio Fiegna; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Andrea Natale Tallarico (IRPS, 2024)

RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature. - M. Millesimo; L. Valentini; Claudio Fiegna; Enrico Sangiorgi; Andrea Natale Tallarico; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot (IRPS, 2025)