Flash-based Field Programmable Gate Array Technology with Deep Trench Isolation. - Kyung Joon Han; Nigel Chan; Sungrae Kim; Ben Leung; Volker Hecht; Brian Cronquist; Danny Shum; Armin Tilke; Laura Pescini; Martin Stiftinger; Ronald Kakoschke (CICC, 2007)

Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application. - Mingcheng Chang; Nigel Chan; Vivek Joshi; Sandra Hecker; Udo Ziller; Petra Poth; Alban Zaka; Tom Herrmann; Seunghwan Seo; Hongsik Yoon; Xin Zou; Zhen Xu; et al. (ESSDERC, 2018)