A 20MHz 4A gate driver with 5.5 to 24V output drive voltage for wide bandgap FETs. - Dejin Zhou; Hongliang Lu; Shu Yuan; Ningye He; Yuan Xu; Rengxia Ning; Zhenhai Chen; Wei Huang (IEICE Electron. Express, 2022)

Design of a 5MHz half-bridge gate driver for GaN HEMTs with adaptive output current. - Liang Li; Dejin Zhou; Wei Huang; Ningye He; Yuan Xu; Rengxia Ning; Zhenhai Chen (IEICE Electron. Express, 2023)