On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs. - Nirmaan Shanker; Li-Chen Wang; Suraj S. Cheema; Wenshen Li; Nilotpal Choudhury; Chenming Hu; Souvik Mahapatra; Sayeef S. Salahuddin (VLSI Technology and Circuits, 2022)

Record Transconductance in Leff 30 nm Self-Aligned Replacement Gate ETSOI nFETs Using Low EOT Negative Capacitance HfO2-ZrO2 Superlattice Gate Stack. - Li-Chen Wang; W. Li; Nirmaan Shanker; Suraj S. Cheema; Shang-Lin Hsu; S. Volkman; U. Sikder; C. Garg; J.-H. Park; Y.-H. Liao; Yen-Kai Lin; Chenming Hu; et al. (VLSI Technology and Circuits, 2023)