A DC-isolated gate drive IC with drive-by-microwave technology for power switching devices. - Shuichi Nagai; Noboru Negoro; Takeshi Fukuda; Nobuyuki Otsuka; Hiroyuki Sakai 001; Tetsuzo Ueda; Tsuyoshi Tanaka; Daisuke Ueda (ISSCC, 2012)

K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W. - Noboru Negoro; Masayuki Kuroda; Tomohiro Murata; Masaaki Nishijima; Yoshiharu Anda; Hiroyuki Sakai 001; Tetsuzo Ueda; Tsuyoshi Tanaka (IEICE Trans. Electron., 2012)

30.5 A GaN 3×3 matrix converter chipset with Drive-by-Microwave technologies. - Shuichi Nagai; Yasuhiro Yamada; Noboru Negoro; Hiroyuki Handa; Yuji Kudoh; Hiroaki Ueno; Masahiro Ishida; Nobuyuki Otuska; Daisuke Ueda (ISSCC, 2014)