Circuit techniques for 1.5-V power supply flash memory. - Nobuaki Otsuka; Mark A. Horowitz (IEEE J. Solid State Circuits, 1997)

DFT Techniques for Wafer-Level At-Speed Testing of High-Speed SRAMs. - Osamu Hirabayashi; Azuma Suzuki; Tomoaki Yabe; Atsushi Kawasumi; Yasuhisa Takeyama; Keiichi Kushida; Akihito Tohata; Nobuaki Otsuka (ITC, 2002)

DFT techniques for memory macro with built-in ECC. - Keiichi Kushida; Nobuaki Otsuka; Osamu Hirabayashi; Yasuhisa Takeyama (MTDT, 2005)

A low leakage SRAM macro with replica cell biasing scheme. - Yasuhisa Takeyama; Hiroyuki Otake; Osamu Hirabayashi; Keiichi Kushida; Nobuaki Otsuka (IEEE J. Solid State Circuits, 2006)

A -90 dBm sensitivity 0.13 μm CMOS bluetooth transceiver operating in wide temperature range. - Kenichi Agawa; Hideaki Majima; Hiroyuki Kobayashi; Masayuki Koizumi; Shin-ichiro Ishizuka; Takeshi Nagano; Makoto Arai; Yutaka Shimizu; Go Urakawa; Nobuyuki Itoh; Mototsugu Hamada; Nobuaki Otsuka (CICC, 2007)

An RF MEMS Variable Capacitor with Intelligent Bipolar Actuation. - Tamio Ikehashi; Takayuki Miyazaki; Hiroaki Yamazaki; Atsushi Suzuki; Etsuji Ogawa; Shinji Miyano; Tomohiro Saito; Tatsuya Ohguro; Takeshi Miyagi; Yoshiaki Sugizaki; Nobuaki Otsuka; Hideki Shibata; et al. (ISSCC, 2008)

An 833MHz Pseudo-Two-Port Embedded DRAM for Graphics Applications. - Mariko Kaku; Hitoshi Iwai; Takeshi Nagai; Masaharu Wada; Atsushi Suzuki; Tomohisa Takai; Naoko Itoga; Takayuki Miyazaki; Takayuki Iwai; Hiroyuki Takenaka; Takehiko Hojo; Shinji Miyano; et al. (ISSCC, 2008)

A Single-Power-Supply 0.7V 1GHz 45nm SRAM with An Asymmetrical Unit-×-ratio Memory Cell. - Atsushi Kawasumi; Tomoaki Yabe; Yasuhisa Takeyama; Osamu Hirabayashi; Keiichi Kushida; Akihito Tohata; Takahiko Sasaki; Akira Katayama; Gou Fukano; Yuki Fujimura; Nobuaki Otsuka (ISSCC, 2008)

Direct Cell-Stability Test Techniques for an SRAM Macro with Asymmetric Cell-Bias-Voltage Modulation. - Akira Katayama; Tomoaki Yabe; Osamu Hirabayashi; Yasuhisa Takeyama; Keiichi Kushida; Takahiko Sasaki; Nobuaki Otsuka (ITC, 2008)

A 0.13 µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation. - Kenichi Agawa; Shin-ichiro Ishizuka; Hideaki Majima; Hiroyuki Kobayashi; Masayuki Koizumi; Takeshi Nagano; Makoto Arai; Yutaka Shimizu; Asuka Maki; Go Urakawa; Tadashi Terada; Nobuyuki Itoh; et al. (IEICE Trans. Electron., 2010)