Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs. - Kyle J. Liddy; Nolan S. Hendricks; Andrew J. Green; Andreas Popp; Miles T. Lindquist; Kevin D. Leedy; Stephen E. Tetlak; Neil A. Moser; Günter Wagner; Kelson D. Chabak; Gregg H. Jessen (DRC, 2019)

The $R_{ text{ON}}-V_{ text{BK}}$ Relationship in $ beta$-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation. - S. Ahmed; A. E. Islam; Daniel Dryden; Kyle J. Liddy; Nolan S. Hendricks; Neil A. Moser; Kelson D. Chabak; Andrew J. Green (DRC, 2023)

Single-Event Burnout by Cf-252 Irradiation in Vertical $ beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate. - Sajal Islam; Aditha S. Senarath; Arijit Sengupta; En-xia Zhang; Dennis R. Ball; Daniel M. Fleetwood; Ronald D. Schrimpf; Esmat Farzana; Arkka Bhattacharyya; Nolan S. Hendricks; James S. Speck (DRC, 2023)

Ni/TiO2/ $ beta$-Ga2O3 Heterojunction Diodes with NiO Guard Ring Simultaneously Increasing Breakdown Voltage and Reducing Turn-on Voltage. - Jeremiah Williams; Nolan S. Hendricks; Weisong Wang; Aaron Adams; Joshua Piel; Daniel Dryden; Kyle J. Liddy; Nicholas Sepelak; Bradley Morell; Adam Miesle; Ahmad Islam; Andrew J. Green (DRC, 2023)