Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft. - Norihide Kashio; Kenji Kurishima; Yoshino K. Fukai; Shoji Yamahata (IEICE Trans. Electron., 2008)

Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal. - Yoshino K. Fukai; Kenji Kurishima; Norihide Kashio; Minoru Ida; Shoji Yamahata; Takatomo Enoki (Microelectron. Reliab., 2009)

Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity. - Kenji Kurishima; Minoru Ida; Norihide Kashio; Yoshino K. Fukai (IEICE Trans. Electron., 2012)

Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage. - Norihide Kashio; Takuya Hoshi; Kenji Kurishima; Minoru Ida; Hideaki Matsuzaki (IEICE Trans. Electron., 2016)

InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz fmax and 5.4-V breakdown voltage. - Takuya Hoshi; Norihide Kashio; Yuta Shiratori; Kenji Kurishima; Minoru Ida; Hideaki Matsuzaki (IEICE Electron. Express, 2019)