A 7-ns/850-mW GaAs 4-kb SRAM with little dependence on temperature. - Hiroshi Makino; Shuichi Matsue; Minoru Noda; Noriyuki Tanino; Satoshi Takano; Kazuo Nishitani; Shimpei Kayano (IEEE J. Solid State Circuits, 1990)

A 12-ps-resolution digital variable-delay macro cell on GaAs 100 K-gates gate array using a meshed air bridge structure. - Akira Ohta; Norio Higashisaka; Tetsuya Heima; Takayuki Hisaka; Hirofumi Nakano; Ryuji Ohmura; Tadashi Takagi; Noriyuki Tanino (IEEE J. Solid State Circuits, 1999)