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Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. - Steven J. Duffy; Brahim Benbakhti; Karol Kalna; Mohammed Boucherta; Wei Dong Zhang 002; Nour-Eddine Bourzgui; Ali Soltani (IEEE Access, 2018)

Sensors based on AlGaN/GaN HEMT for fast H2 and O2 detection and measurement at high temperature. - Hassane Ouazzani Chahdi; Abdallah Ougazzaden; Jean-Paul Salvestrini; Hassan Maher; Ali Soltani; Omar Helli; Nour-Eddine Bourzgui; Léo Breuil; David Danovitch; Paul L. Voss; Suresh Sundaram 004; Vincent Aubry; et al. (IEEE SENSORS, 2019)