Simulation of p-type Schottky Diode Based on Al0.29Ga0.71As with Titanium/Gold Schottky Contact. - Walid Filali; Slimane Oussalah; Noureddine Sengouga; Mohamed Henini; David Taylor (ICM, 2018)

Analysis of I-V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy. - Slimane Oussalah; Walid Filali; Elyes Garoudja; Boumediene Zatout; Fouaz Lekoui; Rachid Amrani; Noureddine Sengouga; Mohamed Henini (Microelectron. J., 2022)