Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling. - A. Vandooren; Liesbeth Witters; Jacopo Franco; Arindam Mallik; Bertrand Parvais; Z. Wu; Amey Walke; V. Deshpande; E. Rosseel; Andriy Hikavyy; W. Li; L. Peng; et al. (ICICDT, 2018)

Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications. - Hyungrock Oh; Attilio Belmonte; Manu Perumkunnil; Jérôme Mitard; Nouredine Rassoul; Gabriele Luca Donadio; Romain Delhougne; Arnaud Furnémont; Gouri Sankar Kar; Wim Dehaene (ESSDERC, 2021)

Process-induced charging damage in IGZO nTFTs. - Gaspard Hiblot; Nouredine Rassoul; Lieve Teugels; Katia Devriendt; Adrian Vaisman Chasin; Michiel J. van Setten; Attilio Belmonte; Romain Delhougne; Gouri Sankar Kar (IRPS, 2021)

Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control. - S. Subhechha; Nouredine Rassoul; Attilio Belmonte; Hubert Hody; Harold Dekkers; Michiel J. van Setten; Adrian Vaisman Chasin; Shamin H. Sharifi; K. Banerjee; H. Puliyalil; Shreya Kundu; M. Pak; et al. (ICICDT, 2022)

Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm. - S. Subhechha; Nouredine Rassoul; Attilio Belmonte; Hubert Hody; Harold Dekkers; Michiel J. van Setten; Adrian Vaisman Chasin; Shamin H. Sharifi; S. Sutar; L. Magnarin; Umberto Celano; H. Puliyalil; et al. (VLSI Technology and Circuits, 2022)

Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays. - Subhali Subhechha; Stefan Cosemans; Attilio Belmonte; Nouredine Rassoul; Shamin Houshmand Sharifi; Peter Debacker; Diederik Verkest; Romain Delhougne; Gouri Sankar Kar (IMW, 2023)

Lowest IOFF < 3×10-21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT. - Attilio Belmonte; Shreya Kundu; S. Subhechha; Adrian Vaisman Chasin; Nouredine Rassoul; Harold Dekkers; H. Puliyalil; F. Seidel; P. Carolan; Romain Delhougne; Gouri Sankar Kar (VLSI Technology and Circuits, 2023)

Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification. - Taras Ravsher; Andrea Fantini; Kruti Trivedi; Nouredine Rassoul; Harold Dekkers; Attilio Belmonte; Jan Van Houdt; Valeri Afanas'ev; Kurt Wostyn; Sebastien Couet; Gouri Sankar Kar (IMW, 2024)

Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI. - Pietro Rinaudo; Adrian Vaisman Chasin; Ying Zhao; Ben Kaczer; Nouredine Rassoul; Harold Dekkers; Michiel J. van Setten; Attilio Belmonte; Ingrid De Wolf; Gouri Sankar Kar; Jacopo Franco (IRPS, 2024)

Fundamental understanding of NBTI degradation mechanism in IGZO channel devices. - Ying Zhao; Pietro Rinaudo; Adrian Vaisman Chasin; Brecht Truijen; Ben Kaczer; Nouredine Rassoul; Harold Dekkers; Attilio Belmonte; Ingrid De Wolf; Gouri Sankar Kar; Jacopo Franco (IRPS, 2024)

Accurate off-current evaluation by parasitic capacitance extraction in capacitor-less DRAM cells. - Daisuke Matsubayashi; Subhali Subhechha; Hyungrock Oh; Nouredine Rassoul; Shamin Houshmand Sharifi; Yiqun Wan; Shreya Kundu; Harinarayanan Puliyalil; Harold Dekkers; Alexandru Pavel; Inhee Lee 004; Gouri Sankar Kar; et al. (IMW, 2025)

Dielectric Breakdown Analysis on Bottom and Top-Gated IGZO-TFT. - Simon Van Beek; Adrian Vaisman Chasin; Subhali Subhechha; Harold Dekkers; Nouredine Rassoul; Yiqun Wan; Hongwei Tang; Joao P. Bastos; Attilio Belmonte; Gouri Sankar Kar (IRPS, 2025)

Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation. - K. Vishwakarma; K. Lee; Anastasiia Kruv; Adrian Vaisman Chasin; Michiel J. van Setten; C. Pashartis; Oguzhan O. Okudur; M. Gonzalez; Nouredine Rassoul; A. Belmonte; Bem Kaczer (IRPS, 2025)