On the Possibility of Dynamically Tuning and Collapsing the Ferroelectric Hysteresis/Memory Window in an Asymmetric DG MOS Device: A Path to a Reconfigurable Logic-Memory Device. - Nujhat Tasneem; Asif Islam Khan (DRC, 2018)

Cryogenic Characterization of Antiferroelectric Zirconia down to 50 mK. - Zheng Wang; Hanbin Ying; Nujhat Tasneem; Anthony Gaskell; John D. Cressler; Martin Mourigal; Asif Islam Khan (DRC, 2019)

Investigating Dynamic Minor Loop of Ferroelectric Capacitor. - Panni Wang; Zheng Wang; Nujhat Tasneem; Jar Hur; Asif Islam Khan; Shimeng Yu (NVMTS, 2019)

Improved Endurance with Electron-Only Switching in Ferroelectric Devices. - Zheng Wang; Nujhat Tasneem; Hang Chen; Shimeng Yu; Winston Chern; Asif Islam Khan (DRC, 2022)