Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. - Isabella Rossetto; Fabiana Rampazzo; Matteo Meneghini; Marco Silvestri; Christian Dua; Piero Gamarra; Raphael Aubry; Marie-Antoinette di Forte-Poisson; O. Patard; Sylvain L. Delage; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2014)

Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. - Mourad Oualli; Christian Dua; O. Patard; P. Altuntas; S. Piotrowicz; Piero Gamarra; Cedric Lacam; J.-C. Jacquet; L. Teisseire; D. Lancereau; Eric Chartier; C. Potier; et al. (Microelectron. Reliab., 2018)