Super-junction trench MOSFETs for improved energy conversion efficiency. - Olayiwola Alatise; Nii-Allotey Adotei; Phil Mawby (ISGT Europe, 2011)

Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair. - Nii-Adotei Parker-Allotey; Olayiwola Alatise; Dean Hamilton; Michael R. Jennings; Phil Mawby; Rob Nash; Rob Magill (ISGT Europe, 2011)

The impact of silicon carbide technology on grid-connected Distributed Energy resources. - Saeed Jahdi; Olayiwola Alatise; Phil Mawby (ISGT Europe, 2013)

The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs. - Saeed Jahdi; Olayiwola Alatise; Petros Alexakis; Li Ran; Philip Mawby (IEEE Trans. Ind. Electron., 2015)

Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery. - Saeed Jahdi; Olayiwola Alatise; Li Ran; Philip Mawby (IEEE Trans. Ind. Electron., 2015)

Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules. - Jose Angel Ortiz Gonzalez; Attahir Murtala Aliyu; Olayiwola Alatise; Alberto Castellazzi; Li Ran; Phil Mawby (Microelectron. Reliab., 2016)

Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS. - Ji Hu; Olayiwola Alatise; Jose Angel Ortiz Gonzalez; Roozbeh Bonyadi; Petros Alexakis; Li Ran; Philip Mawby (IEEE Trans. Ind. Electron., 2016)

Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules. - Saeed Jahdi; Olayiwola Alatise; Jose Angel Ortiz Gonzalez; Roozbeh Bonyadi; Li Ran; Philip Mawby (IEEE Trans. Ind. Electron., 2016)

Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs. - Jose Angel Ortiz Gonzalez; Olayiwola Alatise (Microelectron. Reliab., 2017)

Evaluation of the impact of the physical dimensions and material of the semiconductor chip on the reliability of Sn3.5Ag solder interconnect in power electronic module: A finite element analysis perspective. - Pushparajah Rajaguru; Hua Lu 003; Chris Bailey 001; Jose Angel Ortiz Gonzalez; Olayiwola Alatise (Microelectron. Reliab., 2017)

Evaluation of SiC Schottky Diodes Using Pressure Contacts. - Jose Angel Ortiz Gonzalez; Olayiwola Alatise; Attahir Murtala Aliyu; Pushparajah Rajaguru; Alberto Castellazzi; Li Ran; Philip Mawby; Chris Bailey 001 (IEEE Trans. Ind. Electron., 2017)

Bias temperature instability and condition monitoring in SiC power MOSFETs. - Jose Angel Ortiz Gonzalez; Olayiwola Alatise (Microelectron. Reliab., 2018)

Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs. - Jose Angel Ortiz Gonzalez; Olayiwola Alatise; Phil Mawby (IRPS, 2020)

Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs. - Jose Angel Ortiz Gonzalez; Ruizhu Wu; Saeed Jahdi; Olayiwola Alatise (IEEE Trans. Ind. Electron., 2020)

Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET. - Juefei Yang; Saeed Jahdi; Bernard H. Stark; Ruizhu Wu; Olayiwola Alatise; Jose Angel Ortiz Gonzalez (IECON, 2021)

A Virtual Platform for EV Drivetrain Testing Based on Low-Power Hardware in the Loop System. - Oleksii Zinchenko; Simon Mendy; Xiaoyun Rong; Kyrylo Melnyk; Amr Saleh; Olayiwola Alatise; Philip Mawby; Mohamed Taha (ICIT, 2024)

An Online Unified Delay and Slew Rate Regulation for Current Sharing in Paralleled SiC Power Modules With Active Gate Drivers. - Yan Li; Xibo Yuan; Yonglei Zhang; Kai Wang 030; Zihao Wang; Olayiwola Alatise; Wenzhi Zhou (IEEE Trans. Ind. Electron., 2025)