Development and Study of Atomic Nitrogen Sources for Synthesis of Electronic Materials - Oleg Gluschenkov (1999)

Advanced BEOL Materials, Processes, and Integration to Reduce Line Resistance of Damascene Cu, Co, and Subtractive Ru Interconnects. - Takeshi Nogami; Oleg Gluschenkov; Yasir Sulehria; Son Nguyen; Brown Peethala; Huai Huang; Hosadurga Shobha; Nick A. Lanzillo; Raghuveer Patlolla; Devika Sil; Andrew Simon; Daniel Edelstein; et al. (VLSI Technology and Circuits, 2022)

Contact Cavity Shaping and Selective SiGe: B Low-Temperature Epitaxy Process Solution for sub 10-9 Ω.cm2 Contact Resistivity in Nonplanar FETs. - N. Breil; B.-C. Lee; J. Avila Avendano; J. Jewell; M. Vellaikal; E. Newman; E. M. Bazizi; Ashish Pal; L. Liu; Oleg Gluschenkov; A. Greene; S. Mochizuki; et al. (VLSI Technology and Circuits, 2023)

Backside Power Distribution for Nanosheet Technologies Beyond 2nm. - Ruilong Xie; Wonhyuk Hong; Chen Zhang; Jongjin Lee; Kevin Brew; Richard Johnson; Nicholas A. Lanzillo; Hosadurga Shobha; Taesun Kim; Panjae Park; Shogo Mochizuki; Iqbal Saraf; et al. (VLSI Technology and Circuits, 2024)

Hot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet Devices. - H. Zhou; M. Hasanuzzaman; S. D. Suk; S. Emans; S. Siddiqui; R. Robison; R. Vega; M. Wang; Yasir Sulehria; S. Mochizuki; C. Durfee; Oleg Gluschenkov; et al. (IRPS, 2025)