Reliability issues of GaN based high voltage power devices. - Joachim Würfl; Eldad Bahat-Treidel; Frank Brunner; E. Cho; Oliver Hilt; Ponky Ivo; A. Knauer; Paul Kurpas; Richard Lossy; Matthias Schulz; S. Singwald; Markus Weyers; et al. (Microelectron. Reliab., 2011)

Single- and double-heterostructure GaN-HEMTs devices for power switching applications. - Alberto Zanandrea; Eldad Bahat-Treidel; Fabiana Rampazzo; Antonio Stocco; Matteo Meneghini; Enrico Zanoni; Oliver Hilt; Ponky Ivo; Joachim Würfl; Gaudenzio Meneghesso (Microelectron. Reliab., 2012)

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. - Clément Fleury; Rimma Zhytnytska; Sergey Bychikhin; Mattia Capriotti; Oliver Hilt; Domenica Visalli; Gaudenzio Meneghesso; Enrico Zanoni; Joachim Würfl; Joff Derluyn; Gottfried Strasser; Dionyz Pogany (Microelectron. Reliab., 2013)

E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. - Mattia Capriotti; Clément Fleury; Ole Bethge; Matteo Rigato; Suzanne Lancaster; Dionyz Pogany; Gottfried Strasser; Eldad Bahat-Treidel; Oliver Hilt; Frank Brunner; Joachim Würfl (ESSDERC, 2015)

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. - Clément Fleury; Mattia Capriotti; Matteo Rigato; Oliver Hilt; Joachim Würfl; Joff Derluyn; Stephan Steinhauer; Anton Köck; Gottfried Strasser; Dionyz Pogany (Microelectron. Reliab., 2015)

Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs. - Eldad Bahat-Treidel; Oliver Hilt; O. Bahat Treidel; Joachim Würfl (Microelectron. Reliab., 2016)

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. - Matteo Meneghini; Oliver Hilt; Clément Fleury; Riccardo Silvestri; Mattia Capriotti; Gottfried Strasser; Dionyz Pogany; Eldad Bahat-Treidel; Frank Brunner; A. Knauer; Joachim Würfl; Isabella Rossetto; et al. (Microelectron. Reliab., 2016)

The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications. - Eldad Bahat-Treidel; Oliver Hilt; H. Christopher; A. Klehr; A. Ginolas; A. Liero; Joachim Würfl (DRC, 2020)

GaN-channel HEMTs with AlN buffer for high-voltage switching. - Oliver Hilt; Frank Brunner; Eldad Bahat-Treidel; Mihaela Wolf; Joachim Würfl (DRC, 2021)