Comparison of different feedback signals used in one stage PMD compensators for different modulation formats. - Guillaume Ducournau; Olivier Latry; Eric Joubert; Mohamed Ketata (IEEE Trans. Commun., 2008)

A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications. - Olivier Latry; Pascal Dherbécourt; Karine Mourgues; Hichame Maanane; Jean Pierre Sipma; F. Cornu; Philippe Eudeline; Mohamed Masmoudi (Microelectron. Reliab., 2010)

Characterization and modeling of hot carrier injection in LDMOS for L-band radar application. - Loïc Lachèze; Olivier Latry; Pascal Dherbécourt; Karine Mourgues; V. Purohit; Hichame Maanane; Jean Pierre Sipma; F. Cornu; Philippe Eudeline (Microelectron. Reliab., 2011)

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test. - Jean-Baptiste Fonder; Laetitia Chevalier; Cédric Genevois; Olivier Latry; Cedric Duperrier; Farid Temcamani; Hichame Maanane (Microelectron. Reliab., 2012)

Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life. - Jean-Baptiste Fonder; Olivier Latry; Cedric Duperrier; M. Stanislawiak; Hichame Maanane; Philippe Eudeline; Farid Temcamani (Microelectron. Reliab., 2012)

A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications). - Pascal Dherbécourt; Olivier Latry; Eric Joubert; Karine Dehais-Mourgues; Hichame Maanane; Jean Pierre Sipma; Philippe Eudeline (ICMCS, 2014)

Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization. - Jean-Baptiste Fonder; Olivier Latry; Farid Temcamani; Cedric Duperrier (ICMCS, 2014)

Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests. - Mohamed Ali Belaïd; Ahmed M. Nahhas; M. Gares; K. Daoud; Olivier Latry (Microelectron. J., 2014)

Performance drifts of N-MOSFETs under pulsed RF life test. - Mohamed Ali Belaïd; M. Gares; K. Daoud; Olivier Latry (Microelectron. Reliab., 2014)

An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors. - Alexis Divay; Mohamed Masmoudi; Olivier Latry; Cedric Duperrier; Farid Temcamani (Microelectron. Reliab., 2015)

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. - Alexis Divay; Cedric Duperrier; Farid Temcamani; Olivier Latry (Microelectron. Reliab., 2016)

Gate oxide degradation of SiC MOSFET under short-circuit aging tests. - Safa Mbarek; François Fouquet; Pascal Dherbécourt; Mohamed Masmoudi; Olivier Latry (Microelectron. Reliab., 2016)

Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET. - Safa Mbarek; Pascal Dherbécourt; Olivier Latry; François Fouquet (Microelectron. Reliab., 2017)

Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures. - N. Moultif; Eric Joubert; M. Masmoudi; Olivier Latry (Microelectron. Reliab., 2017)

Estimation of losses of GaN HEMT in power switching applications based on experimental characterization. - Al Mehdi Bouchour; Ahmed El Oualkadi; Olivier Latry; Pascal Dherbécourt; Andres F. Echeverri (Comput. Electr. Eng., 2020)