Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. - Pascal Chevalier 002; Michael Schröter; Colombo R. Bolognesi; Vincenzo d'Alessandro; Maria Alexandrova; Josef Böck; Ralf Flickiger; Sébastien Fregonese; Bernd Heinemann; Christoph Jungemann; Rickard Lovblom; Cristell Maneux; et al. (Proc. IEEE, 2017)

Scaling of InP/GaAsSb DHBTs: A Simultaneous fT/fMAX=463/829GHz in a 10µm Long Emitter. - Akshay M. Arabhavi; Wei Quan; Olivier Ostinelli; Colombo R. Bolognesi (BCICTS, 2018)

Iterative De-Embedding and Extracted Maximum Oscillation Frequency fMAX in mm-Wave InP DHBTs: Impact of Device Dimensions on Extraction Errors. - Wei Quan; Akshay M. Arabhavi; R. Flueckiger; Olivier Ostinelli; Colombo R. Bolognesi (BCICTS, 2018)

InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz. - Wei Quan; Akshay M. Arabhavi; Diego Marti; Sara Hamzeloui; Olivier Ostinelli; Colombo R. Bolognesi (BCICTS, 2019)

New GaInAs/InAs/InP Composite Channels for mm-Wave Low-Noise InP HEMTs. - Diego C. Ruiz; Tamara Saranovac; Daxin Han; Olivier Ostinelli; Colombo R. Bolognesi (BCICTS, 2019)

InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5Vppd-Swing PAM-4 DAC-Driver. - Colombo R. Bolognesi; Akshay M. Arabhavi; Romain Hersent; Sara Hamzeloui; Filipe Jorge; X. Wen; Muriel Riet; Mathieu Luisier; Virginie Nodjiadjim; Filippo Ciabattini; Colin Mismer; Olivier Ostinelli; et al. (BCICTS, 2022)

Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures. - Sara Hamzeloui; Filippo Ciabattini; Akshay M. Arabhavi; W. Quan; Diego Marti; Mojtaba Ebrahimi; Olivier Ostinelli; Colombo R. Bolognesi (BCICTS, 2022)

Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers. - Filippo Ciabattini; Akshay M. Arabhavi; Sara Hamzeloui; Mojtaba Ebrahimi; Olivier Ostinelli; Colombo R. Bolognesi (BCICTS, 2023)

Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz. - Sara Hamzeloui; Akshay M. Arabhavi; Filippo Ciabattini; Mojtaba Ebrahimi; Markus Müller; Olivier Ostinelli; Michael Schröter; Colombo R. Bolognesi (BCICTS, 2023)

High-Power Performance of Type-II GaInAsSb/InP Uniform Absorber Uni-Traveling Carrier Photodiodes. - Rimjhim Chaudhary; Akshay M. Arabhavi; Laurenz Kulmer; Sara Hamzeloui; Marco Eppenberger; Martin Leich; Olivier Ostinelli; Juerg Leuthold; Colombo R. Bolognesi (OFC, 2023)

SPICE Modeling in Verilog-A for Photo-Response in UTC-Photodiodes Targeting Beyond-5G Circuit Design. - C. Mukherjee 001; Djeber Guendouz; Marina Deng; H. Bertin; Antoine Bobin; Nicolas Vaissiere; Christophe Caillaud; Akshay M. Arabhavi; Rimjhim Chaudhary; Olivier Ostinelli; Colombo R. Bolognesi; Patrick Mounaix; et al. (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2023)

High-Temperature Stability Base Ohmic Contacts for InP/GaAsSb DHBTs. - Filippo Ciabattini; Akshay M. Arabhavi; Sara Hamzeloui; G. Bonomo; M. Ebrahimi; Olivier Ostinelli; Colombo R. Bolognesi (BCICTS, 2024)

Type-II GaInAsSb/InP Modified Uni-Traveling Carrier Photodiodes Under Zero-Bias Operation. - Rimjhim Chaudhary; Akshay M. Arabhavi; Sara Hamzeloui; Martin Leich; Olivier Ostinelli; Colombo R. Bolognesi (OFC, 2024)